Hi.
with refer to S32K1xx datasheet, in 6.3.1.2 Reliability specifications data retention of FlexNVM memories mentioned:
respect to S32K144 FlexRAM & FlexNVM capacity which is 4KB & 64KB, so EEPROM backup to FlexRAM ratio in best situation will be 16. write endurance for these setting is at least 100K. data retention is 5 years.
1. Data retention after up to 1 K cycles is 20 years min. if we use half of D_Flash as FlexRAM backup and other for normal write (doing by software), how will be D-Flash data retention time ? (assuming linear relationship e.g. write/erase cycling of 100K)
2. if we write some locations of D-Flash for e.g. 50K and other locations for 1K, data retention time for these two locations is different ? (assume they are not in same block).
3. if we write/erase FlexRAM for e.g. 60K and after that these operations stops, data retention is same as previous?
Thanks.
Hi Ahmad,
You are referring to an old datasheet, please use the latest rev.13
The ratio can be > 16 if you don't use the whole FlexRAM (less than 4kB of records in FlexRAM).
Please use the Flex Memory Endurance Calculator.
The EEPROM retention is specified as 20 years for 10% of the calculated endurance.
1 & 2.
The DFlash endurance is 1k max, Table 38, footnote 6.
3.
As specified, 5 or 20 years, depending on the calculated endurance.
Best regards,
Daniel
.
Hi Ahmad,
You are referring to an old datasheet, please use the latest rev.13
The ratio can be > 16 if you don't use the whole FlexRAM (less than 4kB of records in FlexRAM).
Please use the Flex Memory Endurance Calculator.
The EEPROM retention is specified as 20 years for 10% of the calculated endurance.
1 & 2.
The DFlash endurance is 1k max, Table 38, footnote 6.
3.
As specified, 5 or 20 years, depending on the calculated endurance.
Best regards,
Daniel
.
