the scenario is
when we write and read immediate it is working fine ,if we read after some time the the data bytes are shifting 2-4 bytes but occur randomly
example
the data written to SD RAM
0xA0000000 -> 0x00000000 0x44332211 0x88776655
0xA000000C->0x000000001 0x44332211 0x88776655
....
.....
data reading after some time
0xA0000000 -> 0x00000000 0x44332211 0x88778877
0xA000000C->0x000000001 0x44332211 0x88776655
the SD RAM we used is AS4C4M16SA-6TIN
the timming we have initialized
are
#define SDRAM_REFRESHPERIOD_NS (64 * 1000000 / 4096) /* 4096 rows/ 64ms */
#define SDRAM_TRP_NS (21u)
#define SDRAM_TRAS_NS (42u)
#define SDRAM_TSREX_NS (67u)
#define SDRAM_TAPR_NS (20u)
#define SDRAM_TWRDELT_NS (6u)
#define SDRAM_TRC_NS (60u)
#define SDRAM_RFC_NS (60u)
#define SDRAM_XSR_NS (67u)
#define SDRAM_RRD_NS (14u)
#define SDRAM_MRD_NCLK (2u)
#define SDRAM_RAS_NCLK (2u)
#define SDRAM_MODEREG_VALUE (0x33u)
#define SDRAM_DEV_MEMORYMAP (0x05u) /* 64Mbits (4M*16, 4banks, 12 rows, 8 columns)*/
we used SDK emc files .
Solved! Go to Solution.
hi mike
thanks for replay
probability is reduced when EMC CLK is reduced to 45Mhz from 90Mhz
Refresh interval where we configure the EMC register
the information regarding Refresh interval is not provided in the datasheet.
please provided layout consideration for the SDRAM design.
if need I will send the our schematic files
Hi,
I check the Max. refresh interval time below at AS4C4M16SA datasheet:
There are some application notes about SDRAM design with LPC EMC module:
AN11508: SDRAM interface to LPC18xx/43xx EMC
− Comprehensive information about connecting EMC to different SDRAMs
− Some advanced skills like clock compensation options
− PCB layout guide
AN10771: Using the LPC24xx EMC peripheral to drive SDRAM
− Similar as AN11508, but early and simpler document
Wish it helps.
Have a great day,
Mike
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hi mike
thanks for replay
probability is reduced when EMC CLK is reduced to 45Mhz from 90Mhz
Refresh interval where we configure the EMC register
the information regarding Refresh interval is not provided in the datasheet.
please provided layout consideration for the SDRAM design.
if need I will send the our schematic files
Hi,
First of all, thank you for the patience.
Please check below definition about SDRAM timing:
I checked the SDRAM timing value with below concerns:
#define SDRAM_TRP_NS (21u) From AS4C4M16SA datasheet the value should be 18u;
#define SDRAM_TSREX_NS (67u) is Self-Refresh Exit time, tRC+tIS = 60+1.5 , which should be 62u;
#define SDRAM_TAPR_NS (20u) the value is 18u;
#define SDRAM_RRD_NS (14u) should be 12u;
When you slow down the SDRAM clock frequency, if the issue happen probability reduced?
Have a great day,
Mike
-----------------------------------------------------------------------------------------------------------------------
Note: If this post answers your question, please click the Correct Answer button. Thank you!
-----------------------------------------------------------------------------------------------------------------------
hi mike
thanks for replay
probability is not reduced when EMC CLK is reduced to 45Mhz from 90Mhz
Refresh interval where we configure the EMC register
the information regarding Refresh interval is not provided in the datasheet.
please provided layout consideration for the SDRAM design.
if need I will send the our schematic files