Hello,
I'd like to know DDR memory addressing of Vybrid, because we have to check memory contents is correct or not.
I saw the DDr memory addressing map like below.
Does this means when data write/read to memory, address move to Column=>Bank=>Row.
So, data write/read column[0:9]->1k/bank0, then change bank 0 to 1 and column0-1k/bank1 after bank 7, then row0->1.
Is this correct?
I suppose sequential access means Column=>Row=>Bank, but Vybrid seems different.
Best Regards,
Sugiyama
Hello,
DRAM address mapping for Vybrid is correct. You may also look at
section 10.1.6.1 (Address Mapping) of VFxxx Controller Reference Manual,
Rev. 0, 10/2016.
Have a great day,
Yuri
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