I got the following measured data:
Conditions:
Set capacitance at the gate to minimum to have a faster switching time (in this case only a 1 nF capacitor was used).
Use a series resistor after the gate power supply to dampen down any sorts of potential overshoot (in this case 50 Ohm is used).
Results:
Input signal to the second stage gate rise time 675ns. RF output rise time 693ns.
Best Regards
Pavel
NXP TIC