Dear #Oliver Chen
Many thanks for your quick response.
1) Do we have any way to check the bad pcb layout ? How can we confirm this with hardware level. By measuring DRAM clock frequencies using oscilloscope?
2) Please consider the calibration run up to here >>
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DDR Stress Test (2.6.0)
Build: Nov 18 2016, 23:40:32
NXP Semiconductors.
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Chip ID
CHIP ID = i.MX6 Dual/Quad (0x63)
Internal Revision = TO1.2
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Boot Configuration
SRC_SBMR1(0x020d8004) = 0x00000000
SRC_SBMR2(0x020d801c) = 0x21000001
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ARM Clock set to 1GHz
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DDR configuration
BOOT_CFG3[5-4]: 0x00, Single DDR channel.
DDR type is DDR3
Data width: 64, bank num: 8
Row size: 15, col size: 10
Chip select CSD0 is used
Density per chip select: 2048MB
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Current Temperature: 51
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DDR Freq: 528 MHz
ddr_mr1=0x00000000
Start write leveling calibration...
running Write level HW calibration
Write leveling calibration completed, update the following registers in your initialization script
MMDC_MPWLDECTRL0 ch0 (0x021b080c) = 0x001F001F
MMDC_MPWLDECTRL1 ch0 (0x021b0810) = 0x001F001F
MMDC_MPWLDECTRL0 ch1 (0x021b480c) = 0x001F001F
MMDC_MPWLDECTRL1 ch1 (0x021b4810) = 0x001F001F
Write DQS delay result:
Write DQS0 delay: 31/256 CK
Write DQS1 delay: 31/256 CK
Write DQS2 delay: 31/256 CK
Write DQS3 delay: 31/256 CK
Write DQS4 delay: 31/256 CK
Write DQS5 delay: 31/256 CK
Write DQS6 delay: 31/256 CK
Write DQS7 delay: 31/256 CK
Starting DQS gating calibration
. HC_DEL=0x00000000 result[00]=0x11111111
. HC_DEL=0x00000001 result[01]=0x11111111
. HC_DEL=0x00000002 result[02]=0x11111111
. HC_DEL=0x00000003 result[03]=0x11111111
. HC_DEL=0x00000004 result[04]=0x11111111
. HC_DEL=0x00000005 result[05]=0x11111111
. HC_DEL=0x00000006 result[06]=0x11111111
. HC_DEL=0x00000007 result[07]=0x11111111
. HC_DEL=0x00000008 result[08]=0x11111111
. HC_DEL=0x00000009 result[09]=0x11111111
. HC_DEL=0x0000000A result[0A]=0x11111111
. HC_DEL=0x0000000B result[0B]=0x11111111
. HC_DEL=0x0000000C result[0C]=0x11111111
. HC_DEL=0x0000000D result[0D]=0x11111111
ERROR FOUND, we can't get suitable value !!!!
dram test fails for all values.
What is the issue with this?
Error: failed during ddr calibration
3) We have used 4 RAMS and each has 4Gbit. You can get the data sheet from here >> http://www.alliancememory.com/pdf/ddr3/Alliance%20Memory_DDR3_4G_AS4C256M16D3A-12BCN_A%20die_Commerc...http://www.alliancememory.com/pdf/ddr3/Alliance%20Memory_DDR3_4G_AS4C256M16D3A-12BCN_A%20die_Commerc... <<
Here is the Schematic for DDR Memory part. (Please look at the red highlighted parts). Here we have used only one chip select DRAM CS0_B for every 4 RAM. That is why I have selected chip select as 1. Any mismatch with this ?

For layout design we used T topology. Please give your idea on this.
Regards & Thanks,
Peter.