Hello,
More details why for DDR3: SDCKE[1:0] pull-down is used in the SDP\B, although it is not recommended:
“DRAM_SDCKE0 and DRAM_SDCKE1 require external resistors (such as 10 kΩ) to GND to minimize current
drain during deep sleep mode (DSM).
The BSP (Board Support Package) uses a common DDR routine for both fly-by and T-topology designs.
Fly-by designs have parallel resistor termination on address lines, while T-topology does not.
During low-power self refresh, the BSP programs pad control register GRP_CTLDS to 0x00000000. Therefore,
DRAM_SDCKE0, DRAM_SDCKE1, and other associated GRP_CTLDS I/O are forced to the high-impedance state.
Because DRAM_SDCKE0 and DRAM_SDCKE1 are forced to high-Z, external pull-down resistors are required to
avoid floating outputs during standby. In Freescale designs, 10 kohm resistors are utilized for this purpose.
Any other termination on the DRAM_SDCKE0 and DRAM_SDCKE1 lines (such as 50 ohms) should not be present;
simulation should be performed to ensure CKE signal integrity.”
Regards,
Yuri.