i.MX 8M Quad/8M Mini/8M Nano/8M Plus - maximum supported LPDDR4, DDR4 and DDR3L densities

cancel
Showing results for 
Search instead for 
Did you mean: 

i.MX 8M Quad/8M Mini/8M Nano/8M Plus - maximum supported LPDDR4, DDR4 and DDR3L densities

100% helpful (1/1)

i.MX 8M Quad/8M Mini/8M Nano/8M Plus - maximum supported LPDDR4, DDR4 and DDR3L densities

The purpose of this document is to specify the maximum LPDDR4 ,DDR4 and DDR3L densities that are supported by i.MX 8M family of processors to aid project feasibility assessment capabilities of customers that are evaluating the SoCs for usage in their products. 

 It is strongly recommended to consult with NXP and the memory vendor the final choice of the memory part number to ensure that the device meets all the compatibility, availability, longevity and pricing requirements.

 In all cases, it is strongly recommended to follow the DRAM layout guidelines outlined in the NXP Hardware Developer's Guides for the specific SoCs.

For any questions related to specific DRAM part numbers please contact the respective DRAM vendor. For any questions regarding the i.MX SoC please contact your support representative or enter a support ticket. 

LPDDR4

SoC Max data bus width Maximum density Assumed memory organization Notes
i.MX 8M Quad 32-bit 32Gb/4GB dual rank, dual-channel  device with 16-row addresses (R0-R15) 1, 2, 4
i.MX 8M Mini  32-bit 64Gb/8GB dual rank, dual-channel  device with 17-row addresses (R0-R16) 1, 2
i.MX 8M Nano  16-bit 32Gb/4GB dual rank, single-channel  device with 17-row addresses (R0-R16) 1, 2, 3, 12
i.MX 8M Plus  32-bit 64Gb/8GB dual rank, dual-channel  device with 17-row addresses (R0-R16)  1, 2

 

LPDDR4 - list of validated memories

The validation process is an ongoing effort - regular updates of the table are expected.

SoC Density Validated part number (vendor) Notes
i.MX 8M Quad  24Gb/3GB

MT53B768M32D4NQ-062 WT:B (Micron)

-

i.MX 8M Mini

16Gb/2GB

MT53D512M32D2DS-053 WT:D (Micron)

-

16Gb/2GB

M56Z16G32512A (ESMT)

5

32Gb/4GB

MT53E1G32D2FW-046 WT:A (Micron)

5

64Gb/8GB

MT53E2G32D4DT-046 AIT:A (Micron)

5

i.MX 8M Nano 

16Gb/2GB C1612PC2WDGTKR-U (Kingston) -
32Gb/4GB

MT53E2G32D4DT-046 AIT:A (Micron)

5, 13
8Gb/1GB MT53D512M32D2DS-053 WT:D (Micron) 13
i.MX 8M Plus 48Gb/6GB

MT53E1536M32D4DT-046 WT:A (Micron)

-

 

DDR4

SoC Max data bus width Maximum density Assumed memory organization Notes
i.MX 8M Quad  32-bit 32Gb/4GB x16, 16Gb device with 1 bank group address, 17-row addresses and 10 column addresses 1, 6
i.MX 8M Mini  32-bit 64Gb/8GB x16, 16Gb device with 1 bank group address, 17-row addresses and 10 column addresses 1, 7
i.MX 8M Nano  16-bit 64Gb/8GB x8, 16Gb device with 2 bank group addresses, 17-row addresses and 10 column addresses 1, 8
i.MX 8M Plus  32-bit 64Gb/8GB x16, 16Gb device with 1 bank group address, 17-row addresses and 10 column addresses 1, 7

 

DDR4 - list of validated memories

The validation process is an ongoing effort - regular updates of the table are expected.

SoC Density Validated part number (vendor)
i.MX 8M Quad 32Gb/4GB

4x MT40A512M16JY-083EAAT (Micron)

i.MX 8M Mini  16Gb/2GB 2x MT40A512M16LY-075:E (Micron)
i.MX 8M Nano 16Gb/2GB 1x MT40A1G16RC-062E:B (Micron)
i.MX 8M Plus

64Gb/8GB 4x MT40A1G16RC-062E:B (Micron)
16Gb/2GB NT5AD512M16C4-JRI (Nanya)

 

DDR3L

SoC Max data bus width Maximum density Assumed memory organization Notes
i.MX 8M Quad  32-bit 32Gb/4GB x16, 8Gb device with 16-row addresses and 10 column addresses 1, 9
i.MX 8M Mini  32-bit 64Gb/8GB x8, 8Gb device with 16-row addresses and 11 column addresses 1, 10
i.MX 8M Nano  16-bit 32Gb/4GB x8, 8Gb device with 16-row addresses and 11 column addresses

1, 11

i.MX 8M Plus 

i.MX 8M Plus  does not support DDR3L

 

DDR3L - list of validated memories

The validation process is an ongoing effort - regular updates of the table are expected.

SoC Density Validated part number (vendor)
i.MX 8M Quad  16Gb/2GB 4x MT41K256M16TW-107 AAT (Micron)
i.MX 8M Mini  16Gb/2GB 4x MT41K256M16TW-107 AAT (Micron)

 

Note 1:

The numbers are based purely on the IP vendor documentation for the DDR Controller and the DDR PHY, on the settings of the implementation parameters chosen for their integration into the SoC, and on the JEDEC standards JESD209-4/JESD209-4A (LPDDR4), JESD279-4/JESD279-4A (DDR4), and JESD79-3E/JESD79-3F/JESD79-3-1A (DDR3/DDR3L). Therefore, they are not backed by validation, unless said otherwise and there is no guarantee that an SoC with the specific density and/or desired internal organization is offered by the memory vendors. Should the customers choose to use the maximum density and assume it in the intended use case, they do it at their own risk.

Note 2:

Byte-mode LPDDR4 devices (x16 channel internally split between two dies, x8 each) of any density are not supported therefore, the numbers are applicable only to devices with x16 internal organization (referred to as "standard" in the JEDEC specification).

Note 3:

The memory vendors often do not offer so many variants of single-channel memory devices. As an alternative, a dual-channel device with only one channel connected may be used. For example:

A dual-rank, single-channel device with 16-row address bits has a density of 16Gb. If such a device is not available at the chosen supplier, a dual-rank, dual-channel device with 16-row address bits can be used instead. This device has a density of 32 Gb however since only one channel can be connected to the SoC, only half of the density is available (16 Gb).

Usage of more than one discrete memory chips to overcome market constraints is not supported since only point-to-point connections are assumed for LPDDR4.

Note 4:

Devices with 17-row addresses (R0-R16) are not supported by the DDR Controller

Note 5:

The memory part number did not undergo full JEDEC verification however, it passed all functional testing items (Stress Test, vTSA analysis, memtester).

Note 6:

The density can be achieved by connecting 2 single-rank discrete devices with one 16Gb die each. Since the SoC supports x8 devices and also has connectivity for a second rank, usage of more discrete devices is possible. However, this advantage cannot be used to get higher density since this SoC has only 32Gb/4GB of address space dedicated for the DDR. Two x16 16Gb devices giving 32Gb/4GB in total is, therefore, the optimal choice that balances the maximum density aspects, the signal integrity aspects (only two discrete devices used), and bandwidth aspects (full data bus width used).

Note 7:

The density can be achieved by connecting 4 single rank discrete devices with one 16Gb die each, 2 devices connected to each chip select. Since the SoC supports x8 devices, the usage of more discrete devices is possible. However, this advantage cannot be used to get higher density since this SoC has only 64Gb/8GB of address space dedicated for the DDR. Four x16 16Gb devices giving 64Gb/8GB in total is the optimal choice that balances the maximum density aspects, the signal integrity aspects (only four discrete devices used), and the bandwidth aspects (full data bus width used).

Note 8:

The density can be achieved by connecting 4 single rank discrete devices with one 16Gb die each, 2 devices connected to each chip select. 

Note 9:

The density can be achieved by connecting 4 single rank discrete devices with one 8Gb die each, 2 devices connected to each chip select, or by connecting 2 dual rank discrete devices with two 8Gb dies each. Since the SoC supports x8 devices, the usage of more discrete devices is possible. However, this advantage cannot be used to get higher density since this SoC has only 32Gb/4GB of address space dedicated for the DDR. Four x16 8Gb devices giving 32Gb/4GB in total is, therefore, the optimal choice that balances the maximum density aspects, the signal integrity aspects (four discrete devices used), and bandwidth aspects (full data bus width used).

Note 10:

The density can be achieved by connecting 8 single rank discrete devices with one 8Gb die each, 4 devices connected to each chip select or by connecting 4 dual rank discrete devices with two 8Gb dies each. Note that the first option significantly exceeds the number of devices used on the validation board (4 discrete devices) therefore, it is not guaranteed that the i.MX would be able to drive the signals with margin to the required voltage levels due to increased loading on the traces. A significant effort would be required in terms of PCB layout and signal integrity analysis. Practically, it is not recommended to use more than 4 discrete DDR3L devices. This corresponds to the maximum density of 32Gb/4GB in the case of the single rank devices containing one 8Gb die or 64Gb/8GB in case of the dual-rank devices, each containing two 8Gb dies.

Note 11:

The density can be achieved by connecting 4 single rank discrete devices with one 8Gb die each, 2 devices connected to each chip select or by connecting 2 dual rank discrete devices with two 8Gb dies each.

Note 12:

For single-channel (x16) memory devices, the current maximum available density in the market is 16Gb/2GB (Q1 2022).

Note 13:

Only one channel of the device (and hence, half of its density) was utilized due to the reduced data bus width (x16) of the SoC.

Version history
Revision #:
4 of 4
Last update:
‎09-20-2022 11:22 PM
Updated by: