Hi,
Can you elaborate more on the "The UI seems quite different from the one shown in AN13750 for S32G2." comment? Which EB Tresos version are you using?
As for your questions, the AN13750 still describes the required steps to configure the M7 bootloader under EB Tresos, we have followed it with success under EB Tresos 28.2 and the project from Integration_Reference_Examples_S32G3_2023_02. Some steps can be skipped, since the modifications can be already done or even N/A. But the general idea can be still abstracted from the AN.
The difference comes when creating the IVT, since the RAM start pointer/entry pointer are different under the S32G3 bootloader and the S32G2 bootloader.
For S32G2, the address for both pointers is 0x34700000, as mentioned under the AN13750. For S32G3, looking into the *.map file, the address for both pointers should be 0x35300000.
As for a document specific for S32G3, we understand that it is still not available. We do apologize.
Please, let us know.