Hi,
I am doing some basic simulation of AFT27S010N transistor in ADS and I have some questions.
First, I am simulating IV curves. This is the schematic:
With this schematic, after launching simulation, I get the following warning:
Is there something wrong in my schematic? How can I avoid such warning?
Ignoring this warning, I go on with simulation. IV curves seem to be ok. For Vdc = 28v and Vgs = 1.9v, I get Ids = 112mA, which is near the 90mA used along the datasheet.
After that, I use another schematic to get S(2,1). In this schematic I set Vds = 28v and Vgs = 1.9v.
The values for S(2,1) are just a few dB, far from the about 20 dB stated in the datasheet.
Is there something wrong with the setup of my simulation?
Any advice will be very welcome.
I have attached the workspace I am using.
Hello Sebastian,
I hope all is great with you.
In this case, I would like to recommend the following tutorials from the Keysight Design Software channel below:
How to Design an RF Power Amplifier,The Basics, Class A,AB and B
How to Design a Stable High Frequency Amplifier
GaN transistor amplifier has nothing special in design except of gate bias sequencing.
I hope this information helps.
Regards,
David
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