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2404019_en-US
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Hi NXP Team, Two questions on MRF300AN-27MHz reference design: Q1: Can I put a 110V TVS across drain to ground for protection? Vds is 133V. Is this a good choice? Q2: What is the exact power-on sequence? Gate bias before drain or drain before gate? Also, should RF drive be ramped up slowly or can I apply full drive directly? Thanks.
Hello,
In general, the TVS reverse standoff voltage should be selected above the maximum normal operating drain voltage to prevent unintended conduction during normal operation, while still providing protection against abnormal transient events.
Regarding the power-up sequence, the drain supply can be applied before the gate bias, or vice versa. Both approaches are acceptable in a stable and properly tuned circuit.
Additionally, it is recommended to ramp up the RF drive gradually rather than applying full drive abruptly, as this helps ensure a smoother startup and reduces stress on the device under operating conditions.
Hope this helps!