Dear Experts
We are currently proceeding with a PCB design using the LX2160A and are planning to perform Power Integrity (PI) analysis.
Could you kindly provide guidance on the following items for setting up appropriate analysis conditions?
1. Recommended target impedance for each power rail
2. Assumed maximum transient current (di/dt) conditions for analysis
Additionally, if there are any recommended PI analysis tools or methodologies, we would appreciate your advice.
Thank you for your support, and we look forward to your response.
Best regards,
The LX2160A uses multiple independent rails for core logic, SRAM/PLL, SerDes, DDR, and I/O. The exact rail list and nominal voltages are defined in the LX2160A datasheet and reference design and should be treated as authoritative.
Typical key rails (names vary by schematics):
| Rail Function | Typical Nominal Voltage | Notes |
|---|---|---|
| Core (VDD) | ~0.75–0.85 V | Highest di/dt, most critical for PI |
| Platform / Cache (VDD_PLAT) | ~0.9 V | Large on-die SRAM, sensitive to droop |
| SerDes Analog | ~1.0 V | Noise-sensitive, lower di/dt |
| SerDes Digital | ~0.9 V | Moderate switching activity |
| DDR VDD | 1.2 V | JEDEC-driven, external memory dominates |
| DDR VPP | 2.5 V | Low-current |
| I/O (VDD_IO) | 1.8 V / 3.3 V | Lowest PI criticality |
Since LX2160A does not publish explicit Z targets, the standard voltage ripple-based method is used:
NXP generally recommends ≤ 3–5% ripple on core-type rails for Layerscape devices (derived from design checklists and reference boards). [static.chipdip.ru], [community.nxp.com]
| Rail | Allowable Ripple | Estimated ΔI | Recommended Z_TARGET |
|---|---|---|---|
| Core (VDD) | ±3% (≈25 mV) | 8–12 A | 2–3 mΩ |
| Platform / SRAM | ±3% (≈30 mV) | 4–6 A | 5–8 mΩ |
| SerDes Digital | ±5% | 1–2 A | 25–40 mΩ |
| SerDes Analog | ±5% | <1 A | >50 mΩ |
| DDR VDD | JEDEC | 3–5 A | 20–30 mΩ |
| I/O Rails | ±5–10% | <2 A | >50 mΩ |
Only the core and SRAM rails require very aggressive PDN design down into the low milliohm range.
For PI simulation, worst-case transient assumptions are typically:
These represent:
This aligns with how NXP reference boards and design checklists size bulk + high-frequency decoupling. [static.chipdip.ru], [community.nxp.com]
| Rail | ΔI Assumption | di/dt |
|---|---|---|
| Platform / SRAM | 2–4 A | 0.5–1 A/ns |
| SerDes Digital | 0.5–1 A | 0.1–0.3 A/ns |
| DDR VDD | Governed by JEDEC burst | Slower, regulator-dominated |
| I/O | <0.5 A | Very low |
For LX2160A, PI analysis should cover:
Below ~1 MHz:
1–100 MHz:
100 MHz:
On-package + on-die capacitance (model using package S-parameters if available)
NXP reference designs show a three-tier approach:
This approach is consistent with Layerscape RDB layouts. [static.chipdip.ru]
Widely used tools that work well for LX2160A-class SoCs:
NXP explicitly recommends reviewing AN5407 – LX2160A/LX2162A Design Checklist, which includes power use cases and rail current guidance used internally for PDN sizing. [community.nxp.com]
If you have access to NXP Premium Support, you can also request: