I am now designing a PSU and focusing on TEA2017AAT. In order to enhance the efficiency and thermal performance. I would like to drive GaN MOSFET in the LLC part. Does TEA2017 support GaN design? And how is the negative gate voltage can be achieve? Or any other suggestion?
I didn't see any inrush current limiter such as, NTC in the schematic. Is there any action to reduce the inrush current?
Also, if I am not using the GUI to set parameters of the TEA2017 at beginning. Does the IC has factory setting default parameters? So that I can use to default value to finish my circuit design and then optimize the performance by GUI later.
Dear Dohko,
yes, the TEA2017 can also drive GaN MOSFETs. Please refer to the UM11725 attached, for TEA2017 with GaN MOSFETs reference design. The maximum frequency at which the TEA2017 LLC driver can operate is 800kHz.
For designing your application with the TEA2017 please use the Design Tool attached.
With Best Regards,
Jozef