Hello support team,
Valeo is testing page read/write with page size of 256 bytes, and it seems with 1 ms task the read/write operation is taking 9 ms, while the datasheet for the flash states it should be less than 700 µs. This is their Mem_MainFunction flow:
Hi @haoyue-yan ,
1. No, it is impossible to achieve the datasheet time. Because time in datasheet is just for page write/read was done by external memory device only. But in implementation, to read/write a page, driver include many tasks such as: checking input parameters, assign values for variables, calculate length to read/write, remaining length, write to bit enable write in the external memory, trigger to write page, reading bit status from the external memory,...
2. To improve performance, driver implemented the feature burst
This feature will help to improve performance write/erase/read by reducing number of iterations from memAcc to Mem if length want to read/write/erase bigger than page size. But in this case, their length equal page size and page size in configuration was set to 256. So, burst feature can't help.
Best regards,
Nhi
Hello Nhi,
RTD version: SW32NZ5x_RTD_R21-11_1.0.0_P03
FSS version: S32NZ5x_FSS_FW_R21-11_2.0.0_CD02
memory device is S28HS01GT.
Mem config and the datasheet for memory device attached.
Thanks,
Haoyue
Hi @haoyue-yan ,
What SW package is the customer using?
What device is the external memory?
Could you please attach their project or configuration at least?
Best regards,
Nhi