2140954_en-US

[#1]

S32K146 - MBDT - Runtime data store & retention during power cycle.

Dear NXP Support Team,

I hope this message finds you well.

I’m currently working on a project involving the S32K146 MCU, and I’m using Simulink to handle EEPROM operations. I’ve encountered some issues with data retention that I haven’t been able to resolve, and I’d really appreciate your guidance.

In my setup, I’m trying to store values to EEPROM using the "Flash_EEEWrite" block. I’m rotating values from a Repeating Sequence block and writing them after initializing the "Flash_Config". To ensure proper initialization, I’ve also added a 100ms delay before performing any write operations.

However, after a power cycle, the values I’ve written are not retained. Here’s what I’ve observed:

When the data type of the FLASH_EEEWrite block is set to  uint32_t, the value read back is consistently 7fff(Hex)

When set to uint8_t, the value returned is 82(hex).

These values are constant regardless of the input, and do not reflect the values I’m writing.

I’m not sure if the issue lies in the configuration of EEPROM, the way I’m using the Simulink blocks, or perhaps a misunderstanding of how the FLASH_EEEWrite block works in this context.

I’ve attached the Simulink model I’m working with, in case it helps illustrate the setup more clearly.

Would you be able to provide any insight into what might be going wrong, or any recommended steps I should follow to ensure reliable EEPROM writes and retention across power cycles?

Thank you very much in advance for your time and support. I really appreciate any help or suggestions you can provide.