The purpose of this document is to provide extended guidance for selection of compatible LPDDR5 and LPDDR4x memory devices that are supported by the i.MX 95 and i.MX 952 processors. In all cases, it is strongly recommended to follow the DRAM layout guidelines outlined in the NXP Hardware Developer's Guides for the specific SoCs.
Please note that some of the LPDDR4x devices may not support operation at low speeds and in addition, DQ ODT may not be active, which can impact signal integrity at these speeds. If low speed operation is planned in the use case, please consult with the memory vendor the configuration aspects and possible customization of the memory device so correct functionality is ensured.
| SoC | Max Data bus width | Maximum density | Assumed memory organization | Notes |
| i.MX 95 | 32-bit | 128Gb/16GB | dual rank, dual channel device with 17-row addresses and x8 (byte mode) organization | 1, 3, 7 |
| i.MX 952 | 32-bit | 128Gb/16GB | dual rank, dual channel device with 17-row addresses and x8 (byte mode) organization | 1, 3, 7, 9 |
Note: The memory vendors often list their devices as LPDDR5x in their high-level product information while in fact, they are in most cases backward compatible with the LPDDR5 mode. This may lead to the false impression that there are not so many LPDDR5 devices on the market. In such cases, it is strongly recommended to check the full datasheet to confirm if the device is in fact LPDDR5/LPDDR5x or LPDDR5x only. The SoC cannot be used with devices that only support the LPDDR5X mode.
The validation process is an ongoing effort - regular updates of the table are expected.
| SoC | Density | Memory Vendor | Validated Memory Part# | Notes |
| i.MX 95 |
128Gb/16GB | Micron | MT62F4G32D8DV-023 FAAT:C | - |
| 64Gb/8GB |
Samsung |
- | ||
| 32Gb/4GB |
Samsung |
2 | ||
| 32Gb/4GB |
Samsung |
K3KL8L80EM-MUCV | 2 | |
| 64Gb/8GB |
SK HYNIX |
2 | ||
| 64Gb/8GB |
Micron |
2, 6 | ||
| 32Gb/4GB |
Micron |
MT62F1G32D2DS-020 WT:D |
2 | |
| 16Gb/2GB |
Micron |
2 | ||
| 64Gb / 8GB |
Rayson |
RS2G32LO5D24DB-31BT |
2 | |
| 64Gb / 8GB |
CXMT |
CXDB6CCBM-MA-A |
2 | |
| i.MX 952 |
128Gb/16GB | Micron | MT62F4G32D8DV-023 FAAT:C | 9 |
| 32Gb/4GB |
Micron |
MT62F1G32D2DS-020 WT:D |
2 |
The SoC cannot be used with memory devices that only support the LPDDR5x mode.
| SoC | Max Data bus width | Maximum density | Assumed memory organization | Notes |
| i.MX 95 | 32-bit | 128Gb/16GB | dual rank, dual channel device with 17-row addresses | 1 |
| i.MX 952 | 32-bit | 128Gb/16GB | dual rank, dual channel device with 17-row addresses | 1, 9 |
The validation process is an ongoing effort - regular updates of the table are expected.
| SoC | Density | Memory Vendor | Validated Memory Part# | Notes |
| i.MX 95 |
64Gb/8GB | Micron | 5 | |
| 8Gb/1GB |
Micron |
2 | ||
| 128Gb/16GB |
Micron |
MT53E4G32D8GS-046 | 2 | |
| 64Gb/8GB |
SK Hynix |
H54G66BYYVPX104 | 2 | |
| 32Gb/4GB |
Intelligent Memory |
IMBG32L4KBB_V10 |
2 | |
| 48Gb/6GB |
Micron |
MT53E1536M32D4DT-046 WT:A | 3, 8 | |
| 24Gb/3GB |
Micron |
MT53E768M32D4DT-053 AIT:E | 3, 8 | |
| 8Gb/1GB |
Samsung |
2 |
||
| 32Gb/4GB |
Intelligent Memory |
IMBG32LK4BBG-046I |
2 |
|
| 32Gb/4GB |
Alliance Memory |
AS4C1G32MD4V-046BIN |
2 |
|
| 64Gb/8GB |
Rayson |
ATL4X8G32M2D-46IT |
2 |
|
| 64Gb/8GB |
Rayson |
ATL4X8G32M2D-46AIT |
2 |
|
| 64Gb/8GB |
DW |
DWCTB36HLC0 |
2 |
|
| 8Gb/1GB |
Alliance Memory |
AS4C256M32MD4V-062BAN |
2 |
|
| 32Gb/4GB |
ISSI |
IS46LQ32K01S2A-046BLA2 |
2 |
|
| 32Gb/4GB |
Nanya |
NT6AT1024T32AV-J1 |
2 |
|
| i.MX 952 | 64Gb/8GB | Micron | 9 |
Note: This SoC supports LPDDR4x memory devices.
This SoC is not compatible with memories that only support LPDDR4.
Combo Devices that support both LPDDR4x and LPDDR4 are compatible with the SoC.
Note 1:
The numbers are based purely on the IP documentation for the DDR Controller and the DDR PHY, on the settings of the implementation parameters chosen for their integration into the SoC, SoC reference manual and on the JEDEC standards JESD209-5 (LPDDR5) and JESD209-4C/JESD209-4-1 (LPDDR4/4X). Therefore, they are not backed by validation, unless said otherwise and there is no guarantee that an SoC with the specific density and/or desired internal organization is offered by the memory vendors. Should the customers choose to use the maximum density and assume it in the intended use case, they do it at their own risk.
Note 2:
The memory part number did not undergo full JEDEC verification however, it passed all functional testing items.
Note 3:
Memory devices with binary densities (e.g., 1 GB, 2 GB, 4 GB) are preferred because they simplify memory management by aligning with system addressing schemes and reducing software complexity.
Note 4:
All memory parts are available at vendors unless stated otherwise. Checked Q2 2026
Note 5:
Memory device supports both LPDDR4x and LPDDR4, however can only be used in LPDDR4x mode
Note 6:
Not validated by NXP but confirmed working on a non NXP Board
Note 7:
The maximum density supported may change in the future when DRAM vendors make higher density options available
Note 8:
This DRAM part number is not recommended for new designs
Note 9:
This SoC is in Pre-Production