Demo
NXP demonstrates the industry’s highest power LDMOS narrowband transistor for IFF and civil transponders
Demo / product features
MMRF2010N 250 W Pulse 50 V LDMOS Transistor
- 250 W Peak, 1030-1090 MHz reference circuit
- Plastic package TO-270WB-14
- 50 Ohm Input matching
- Singe ended
MMRF1317H 1500 W Pulse 50 V LDMOS Transistor
- Highest power narrowband IFF transistor for defense and civil use
- Ceramic package NI-1230H-4S
- 1500 W Peak, 1030-1090 MHz reference circuit
- > 10:1 VSWR
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