Eeprom endurance and Writing and erase/programming process

[javiervallori]

Hi, I have one question about the writing and erase/programming process for the LPC43xx MCUs. In the datasheet at 50.6.2.1 section, indicates the following:

- "Partial page writes are allowed, and the EEPROM will only take locations where a word has been written for the erase/program cycle."

Does this sentence means that the writing of a word, do not affect in the ENDURANCE of another word of the SAME page? In other words, the erase/programming process is done in the hole page, or just in the writing words? Thanks in advance.

[kerryzhou]

Hi Javier,

Your understanding is correct, write the word which has never write before in the same page, don't affect the endurance of another word of the same page.
Actually, the erase/programing process is done in the whole page.

Have a great day,
Kerry

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