Dear Mike,
To invalidate you can write more zeros safely as you don't want to use the cells info but want to "disable" it. In the normal process of these Flash wearing, you could have the descriptors in RAM as mentioned by Nabla69. Actually, a similar principle is used in the new S12XE EEEPROM (Emulated E²PROM). (Yes, that's 3 Es...)
I know that Freescale did extensive research/tests in the Flash they are using.
That is why they can proudly announce very low defectivity in the S12 family altogether
As far as I know tests were revealing a lower number of cycles when doing overprogramming.
May you please explain to me FFS1 and 2 and MTD terms ? I am not familiar with these.
At the time of old Flash, the retention was much shorter, so leaks much higher. As the technology was may be larger, there was less impact on the floating gates life. I am just supposing here.
I will try to dig information from Freescale NVM Guru I know. Depending on the sensitivity of the information, I may not be able to get and/or post much. Processes are Confidential in all companies.
As far as I understood, the "writting more zeros" is not necessarily a stress on a certain flash cell, but can be on the row getting the high voltage from the charge pump.
I don't promise more information than I already explained.
Alban.