Program/Erase Flash Using LAP register on QE128/64

[pbouf]

Hello,

I am trying to erase/program the flash on the QE164 device. For either operation I need to write to a flash memory location before I launch the command. I write to a flash location by using the linear address pointer registers LAP[2:0] defined in the QE128 Reference Manual at paragraph 4.4.2.2. I am not getting the results I want evidently.

What is the value to write in the LAP[2:0] registers for each page I want to program/erase?

I thought I had to write a value in the range 0xP8000- 0xPBFFF (where P is the PPAGE of flash I want to access from 0 to 3 on the QE64). So if wanted to write to flash location 0x2080 I would have to write the value 0x0A080 in the LAP registers.

What is it that I don't understand?

Thank you all!

[admin]

Hi,
I am also attempting to read and write into PPAGE0,PPAGE2,PPAGE4,PPAGE5,PPAGE6 and PPAGE7 using assembly, I am able to write into Linear Address Pointer Registers 2:0 (LAP2:LAP0). However, I am not able to do so with Linear Byte Register (LB).

The LB register appears to be READ_ONLY, is there a document of an asm set up routine for this? 

Thanks.