Hello Celso,
Yes, the datasheet does seem a little contradictory. I might guess that the maximum values shown in Table A-5 are applicable to steady state conditions. The absolute maximum value given in Table A-1 may apply to short transient peaks, possibly based on a single event. I don't really know. I note that, for the QG8, the maximum is 0.2mA in both directions.
It is also quite possible that the survival of the protection diode is not the only factor. There could also be a possibility that the injection current might cause latch-up of the device, to be avoided at all costs.
Whether or not a zener diode is required between Vdd and Vss will depend on the duration of any injection current impulses. For short transient events, the usual bulk capacitor (typically 10uF) might be cabable of absorbing the energy, without exceeding Vdd maximum. However, for the automotive environment, the zener is probably a good safeguard.
My personal approach is to design for zero injection current. even though, this may involve additional buffer components. I do not rely on the presence of the protection diodes. If a failure should occur, my aim is for it to be one of the buffer components, and not the MCU.
Regards,
Mac