PF81 PF82 PMIC - Process Node and Technology Details

[maciej_filipowicz]

Hi,

I'm currently evaluating the PF8100/PF8200 PMIC for a NewSpace LEO application and would like to better understand the manufacturing process details for radiation analysis and reliability assessment.

Could someone from NXP provide information about:

* Process node (e.g., 180nm, 130nm, or other)?

* Process technology used (e.g., BCD, FDSOI, bulk CMOS)?

PF8200 is designed for automotive applications with ISO 26262 ASIL-B(D) compliance, which suggests robust process controls, which is suitable for short mission on LEO.
​If this information is covered under NDA, I'm happy to discuss through official channels.

[ErikaC]

Hello,

Please note that I’m unable to share detailed information through this community channel.

The information you requested is: 130 nm for CMOS.

If you require more detailed information, please open a support ticket so we can assist you further.

https://www.nxp.com/support/support:SUPPORTHOME

Thank you for your understanding.

[maciej_filipowicz]

ErikaC,
I believe this short information is enough. I hope in next few years I will be able to publish some radiation immunity data of your ICs from LEO mission.

Thanks a lot!
Maciej