Hello Santhosh,
There was the diffusion and BoM update made in October 2012 resulting in the transition from TJA1042T/3,118 to TJA1042T/3/CM,118.
Here are the details:
- Upgrade of the A-BCD3 diffusion process with High-Density-Plasma (HDP) oxide based passivation, improving robustness against passivation cracks. This is already in use for years for other automotive products in the A-BCD3 diffusion process.
- 20μm AuPd bondwire i.s.o. 25μm Au bondwire
- 280μm die thickness i.s.o. 380μm
"/CM" and “/1J” are used to identify this device as the dual source version of the device. We internally manufacture this device at two FAB locations in order to give our end customer built in dual sourcing for many of our devices. This code is used for the EDI ordering only so there is no technical reason behind. Please find attached the PCN notification associated to this dual source wafer fab.
Best regards,
Tomas