AFM907 is a LDMOS device. The drain current dependency on the gate-to-source voltage is quadratic. Parameters of the curve can be found from datasheet Table 5 "On characteristics". I found dependency as: Id=8*(V-Vgsth)^2 [A].
Sure, the device fails because your design is unstable. As the quiescent current rises, the gain increases and at certain moment the amplifier begins oscillation at arbitrary frequency. AFM907 is conditionally stable. It can oscillate at certain source and load impedances. A design must provide some stability enhancement networks to avoid problems. You must analyze your design and modify it to improve the stability.
To keep your device during initial board bring up, some precautions are required. Perform control of output or drain voltage using spectrum analyzer or a scope, attach nominal load to the output, set power supply current protection at reasonable level (about twice of the target quiescent current), begin testing at low drain voltage (6V), increase bias voltage to set target drain current, apply input RF signal, check small-signal gain. Once you make sure there are no problems, you can proceed to next steps.
I recommend you to read "Precautions for RF Power Transistors" in the RFTOPICS from Polyfet:
www.polyfet.com/pptadb.htm
Best Regards,
Pavel
NXP CAS