Wideband 100 W GaN

[#1]

Features

• Wide band amplifier
• 100W GaN 200 MHz - 2500 MHz
• Minimum 12 db Gain
• 40% efficiency
• Compact circuit
• Highest ruggedness capability in the industry — > 65:1 VSWR
• Highest gain figures in the industry — up to 26 dB
• Highest efficiency in the industry — up to 80% at P1dB
• Cost-effective, over-molded plastic packaging options
• Low thermal resistance air cavity packaging options
• Backed by NXP's secure volume manufacturing capability
• Proven reliability, quality and consistency
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• World-class, global applications and design support
• Available to participate in NXP's longevity program (10 year or 15 year lifetime guarantee — more information)
• Field-proven high-voltage LDMOS process

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Links

• RF Military

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