Wideband 100 W GaN

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Features

Wide band amplifier
100W GaN 200 MHz - 2500 MHz
Minimum 12 db Gain
40% efficiency
Compact circuit
Highest ruggedness capability in the industry — > 65:1 VSWR
Highest gain figures in the industry — up to 26 dB
Highest efficiency in the industry — up to 80% at P1dB
Cost-effective, over-molded plastic packaging options
Low thermal resistance air cavity packaging options
Backed by NXP's secure volume manufacturing capability
Proven reliability, quality and consistency
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
World-class, global applications and design support
Available to participate in NXP's longevity program (10 year or 15 year lifetime guarantee — more information)
Field-proven high-voltage LDMOS process

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