L-Band and S-Band Radar Devices for Aerospace

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L-Band and S-Band Radar Devices for Aerospace

L-Band and S-Band Radar Devices for Aerospace

Demo

NXP boosts aerospace communications and radar performance for defense systems. See this demo for how our transistors deliver highest RF output power for radar and identification, friend-or-foe (IFF) systems

 

 

Demo / Product features

MMRF1314H 1000 W Pulse 52 V LDMOS Transistor

  • 100 W Peak, 1200-1400 MHz reference circuit
  • Ceramic package NI-1230H-4S
  • Internal prematch
  • > 20:1 VSWR

 

MMRF1317H 1500 W Pulse 50 V LDMOS Transistor

  • Highest power narrowband IFF transistor for defense and civil use
  • Ceramic package NI-1230H-4S
  • 1500 W Peak, 1030-1090 MHz reference circuit
  • > 10:1 VSWR

 

MMRF1312H 1200 W Pulse 52 V LDMOS Transistor

  • Highest power broadband L-Band transistor for military and civil use
  • Ceramic package NI-1230H-4S
  • 1200 W Peak, 900-1215 MHz reference circuit
  • > 20:1 VSWR

 

NXP Recommends

 

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Version history
Last update:
‎05-24-2016 02:46 PM
Updated by:
NXP Employee