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- AFV10700H Highest Power Density 750 W L Band RF LDMOS Transistor
AFV10700H Highest Power Density 750 W L Band RF LDMOS Transistor
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AFV10700H Highest Power Density 750 W L Band RF LDMOS Transistor
AFV10700H Highest Power Density 750 W L Band RF LDMOS Transistor
Demo
NXP boasts about power and prowess in the industry’s highest power density in LDMOS technology with a compact 750 W 1.3 x 2.55 inch reference circuit. See this demo for how our transistors deliver highest RF output power for automatic dependent surveillance – broadcast (ADS-B), identification friend-or-foe (IFF), and distance measuring equipment (DME) systems.
Product
- AFV10700H|700 W Pulse, 1030-1090 MHz, 52 V|NXP (50V LDMOS, 750 W Peak, Gain 17dB, Efficiency 58%)
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