Demo
NXP’s new Doherty amplifier-optimized power transistors provide high power, small footprints, and higher frequencies required for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies
Demo / product features
A2G35S160-01S / A2G35S200-01S 48 V GaN Doherty Power Amplifier Solution
- Frequency 3400–3500 MHz
- Asymmetrical Doherty performance at 8 dB OBO
- Gain 13.8 Db
- Efficiency 45.8%
- Peak power 55.2 dBm
- NI-400S-2S package
A2G26H281-04S 48 V GaN Doherty Power Amplifier In-package Solution
- Frequency 2496–2690 MHz
- Doherty performance at 8 dB OBO
- Gain 15.3 dB
- Efficiency 57%
- Peak power 54.6 dBm
- NI-780S-4L package
A2G22S251-01S 48 V GaN Single-ended Transistor
- Frequency 1805–2200 MHz
- Class AB performance at 7 dB OBO
- Gain 18 dB
- Efficiency 35%
- Peak power 53.8 dBm
- NI-400S-2S package
NXP Recommends
- A2G22S251-01S – Single-ended GaN for 1805-2200 MHz cellular base stations
- A2G26H281-04S – In-package asymmetric Doherty GaN for 2496-2690 MHz cellular base stations
- A2G35S160-01S – Single-ended GaN for 3400-3600 MHz cellular base stations
- A2G35S200-01S – Single-ended GaN for 3400-3600 MHz cellular base stations
Fast Track 5G with NXP
