SPC5634M 10% can't write code, What is the difference between version SPC5634M F1 and F2 version?

[jack_li]

Using the CodeWarrior for MPC55xxMPC56xx v2.10

Spc5634MF1MLQ80 has 10% of the products can't burn write code,

Spc5634MF2MLQ80 without the phenomenon.

Why can't a F1 with 10% proportion, writing code?

What is the difference between F1 and F2 is not the same?

Aiming at this problem, we have done a test board, code into separate testing MCU

Attached is the code and the circuit drawing!

David TosenovjanPetr StancikMPC5xxx@

目前我们使用CodeWarrior for MPC55xxMPC56xx v2.10

spc5634MF1MLQ80有10%的产品出现不能烧录写入代码，

spc5634MF2MLQ80没有该现象。

为什么F1会有10%比例左右的不能写入代码程序？

F1与F2不一样的区别是什么？ !

Original Attachment has been moved to: LQ_KEY_LED测试通过.rar

[randyd]

The F2 version of the device can have the same issue of the SRAM being disabled by not grounding the VSTBY pin. VSTBY should either be tied directly to ground or it should be tied to a power supply that is either 1 volt or 2.0 to 5.5 volts.

It should not be left floating or just pulled down with a resistor.

randy

[randyd]

The F1 and F2 are different revisions of the device.

The Spc5634MF2MLQ80 is mask set 1M35Y and the Spc5634MF2MLQ80  is mask set 2M35Y.

The differences between these 2 mask sets can be found by comparing the errata lists for the 2 revisions of the MCU.

http://cache.nxp.com/files/microcontrollers/doc/errata/MPC563XM_1M35Y.pdf

http://cache.nxp.com/files/microcontrollers/doc/errata/MPC563XM_2M35Y.pdf

The differences are:

e3159: MPC563xM/SPC563M: MIDR MASKNUM field is set to 0x21

e5909: MPC563xM/SPC563M: MIDR MASKNUM field is set to 0x22

ANd the F1 (1M35Y) also has this additional errata:

e5128: eQADC: Some channels do not meet SNR specification

These changes would not explain why you would be having an issue on the earlier revision devices.

I am not certain what the issue you are actually seeing is. Are you not able to initially program the flash on 10% of the the older revision MCU? Or are you having issues programming the flash from code running on the MCU?

Could it also be that 10% of the devices are not communicating with the programming tool?

From quick look at your schematics, I see that VSTBY (BSTBY in your schematics) has a 10K pull down resistor. This should be a 0 ohm resistor.  This may prevent access to the SRAM by the programmer or by code running on the MCU. This could occur on any of the devices, not just 1 revision or the other.

[jack_li]

F1 in use process has 10% can't write code?(the debugger can't connect MCU)

F2 in use process without this kind of phenomenon

VSTBY 10 k pulldown resistor,

We use the same test board,

Why 10% of F1 can't write code phenomenon?

The manufacturer is F1 version can't write code?Hence the upgrade F2 version?

F1使用过程中有10%不能写入代码？（调试器连接不到MCU)

F2使用过程中没有这种现象

VSTBY 10 k下拉电阻器问题，

我们使用的是同一个测试主板测试，

为什么会出现F1有10%的不能写入代码现象？

生产厂家是不是F1版不能写入代码？所以才升级F2版本？

[jack_li]

Using the CodeWarrior for MPC55xxMPC56xx v2.10

Spc5634MF1MLQ80 has 10% of the products can't burn write code,

Spc5634MF2MLQ80 without the phenomenon.

Why can't a F1 with 10% proportion, writing code?

What is the difference between F1 and F2 is not the same?

Aiming at this problem, we have done a test board, code into separate testing MCU

Attached is the code and the circuit drawing!

使用CodeWarrior for MPC55xxMPC56xx v2.10

spc5634MF1MLQ80有10%的产品出现不能烧录写入代码，

spc5634MF2MLQ80没有该现象。

为什么F1有10%比例，不能写入代码程序？

F1与F2不一样的区别是什么？

针对这个问题，我们做了一个测试板，单独检测MCU代码写入

附件是代码和电路图纸！