MC9S08DZ60 EEPROM Burst

[egoodii]

MC9S08DZ60 data sheet Rev 3 section 4.5.4 mentions 'burst' programming only in reference to FLASH block sizes and memory area name.  I take it from this, and anecdotal evidence in my attempts, that burst-stacked commands don't work to fill an EEPROM sector (4/8 bytes) faster?  If I 'spin' on FCBEF to start the next command, only the first byte programs correctly; subsequent are corrupt.  If I spin on FCCF, all bytes work.

Earl Goodrich II

CTO

Lectronix, Inc.

[Ake]

Hello,

Yes the burst mode, 32 byte writing on the 9S08DZ, is only available for the Flash EPROM.

The EEPROM is programmed one byte at a time.

Regards,

Ake

[egoodii]

Then perhaps section 4.5.4 should be named 'Burst Program for Flash Array' to isolate it from the rest of section 4.5 that applies to both the Flash and EEPROM arrays.

Thank you!

Earl Goodrich II

[Encoder]

As you may see also from my thread about EEPROM & Flash performances and access, the related section on the "preliminary" data sheets of the whole 9S08Dx is poor and ambiguos at least.

Let's hope Freescale will clear and edit the whole subject in the near future....

Encoder