Hello Bob1,
Bob1 wrote:
I have not determined which route to pursue. At this time I am experimenting with pull-up resistors on a working system, which has with a few “2.4 volt chips” installed.
It’s difficult to judge the effects of pull-up resistors while looking at a data signal with a scope, but I don’t think a 3.3K contributes to a measurable change on the high levels. Some are between 3.5 and 4 volts. Others are very near 5 volts.
Does your MCU operate with a Vdd of 5 volts and the SRAM with a Vdd of 2.4 volts? If this is so, you are attempting to send a 2.4 volt CMOS output to the MCU. This is a totally different issue, and pullup resistors not work.
For both-way operation of the data bus, the use of the HCT 245 would give the following requirements -
- The HCT device would require Vdd of 5 volts.
- For the SRAM-to-MCU data direction, operation should be OK since the minimum allowable logic high input level is 2.0 volts.
- For the MCU-to-SRAM data direction, a 5 volt CMOS output would be applied to the memory device. Unless the device is specified as having "5 volt compatible inputs", this could be a problem.
For non-compliant inputs, a series resistor to limit the injection current into the input of the memory device may be possible, but this might introduce operating speed limitations. The injection current would need to be limited to a quite low value - check the specification for the memory device, and keep well below the maximum limit for a single input (consider how many input lines may simultaneously have injection current). A 4k7 series resistor should limit the current to about 0.4mA.
For the address bus and other unidirectional control lines you may well be able to us a suitable voltage divider to halve the voltage ouput from the MCU (perhaps a pair of 4k7 resistors for each input).
Regards,
Mac
Message Edited by bigmac on
2008-09-25 02:03 AM