Hello Igor,
ENGcm11876
ESDRAMC: Data corrupted during burst access across a page boundary of an 8-column SDRAM.
"This corruption is due to the fact that the ESDRAMC cannot perform a burst access across a row/page boundary. "
Projected Impact:
"SDRAM devices addressed with 8 columns, organized in 1M x 16 bit x 4 banks, cannot be used."
8 columns = 256 addresses and there are 4096 row addresses or pages in a 1M device.
The burst length is 8 and the size is 16bit x 8 =128bit.
How can this bursts across a row or page boundary?
Best regards,
Nori Shinozaki
Hello,
The problem arises when start address of a SDRAM burst is not aligned
with burst size (is not multiple of burst size). In this case, on page boundary
the burst should be split into two accesses, and for 8-column SDRAM data
may be corrupted.
Have a great day,
Yuri
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Hello Yuri,
Thanks, let me confirm.
For 8-column 1M x 16bit x 4bank, the size of 1 page is 2^8 * 16 = 4096 bit.
When the burst length is 16bit * 8 = 128bit.
Is this assumption correct?
You explained that depend upon the start address, the burst can across the page boundary.
Say 10-column addressing, 1 page size is 2^10 * 16 = 16,384 bit.
In this case, will 128bit burst size never across the page boundary?
Best regards,
Nori Shinozaki
Hello,
the problem takes place just for 8-column DRAM parts. This
restriction should be considered as hardware issue for 8-column
parts. Basically page boundary may be acrossed for 10-column
devices too (without the issue), when start address is near the
boundary.
Regards,
Yuri.
Yuri,
Thanks, it's cleared!
Best regards,
Nori Shinozaki