1.Environment:
platform: imx6q
DDR_Stress_Tester version : V1.0.3
PC: win7 64bit
DDR3: Micron MT41K512M16HA-125
2.ERROR:
After running the "DDR_Stress_Tester.exe -t mx6x -df MX6Q_SabreSD_DDR3_528MHz_64bit.inc",
when DQS gating calibration it says
"ERROR FOUND, we can't get suitable value !!!!
dram test fails for all values."
1)I have tried many DDR frequency, there is the same fault.
2)I have tried some SI Configuration to change the strength, there is the same fault.
Could you please help me to check whether the Script_Aid_V0.10.xlsx is correct?
logs as follow:
MX6DQ opened.
HAB_TYPE: DEVELOP
Image loading...
download Image to IRAM OK
Re-open MX6x device.
Running DDR test..., press "ESC" key to exit.
******************************
DDR Stress Test (1.0.3) for MX6DQ
Build: Jun 25 2014, 12:09:21
Freescale Semiconductor, Inc.
******************************
=======DDR configuration==========
BOOT_CFG3[5-4]: 0x00, Single DDR channel.
DDR type is DDR3
Data width: 64, bank num: 8
Row size: 16, col size: 10
Chip select CSD0 is used
Density per chip select: 4096MB
==================================
What ARM core speed would you like to run?
Type 0 for 650MHz, 1 for 800MHz, 2 for 1GHz, 3 for 1.2GHz
ARM set to 800MHz
Please select the DDR density per chip select (in bytes) on the board
Type 0 for 2GB; 1 for 1GB; 2 for 512MB; 3 for 256MB; 4 for 128MB; 5 for 64MB; 6
for 32MB
For maximum supported density (4GB), we can only access up to 3.75GB. Type 9 to
select this
DDR density selected (MB): 256
Calibration will run at DDR frequency 528MHz. Type 'y' to continue.
If you want to run at other DDR frequency. Type 'n'
Enter the DDR frequency for calibration [350MHz to 528MHz]:
350
The freq you entered was: 350
DDR Freq: 352 MHz
Would you like to run the write leveling calibration? (y/n)
Please enter the MR1 value on the initilization script
This will be re-programmed into MR1 after write leveling calibration
Enter as a 4-digit HEX value, example 0004, then hit enter
0004 You have entered: 0x0004
Start write leveling calibration
Write leveling calibration completed
MMDC_MPWLDECTRL0 ch0 after write level cal: 0x001F001F
MMDC_MPWLDECTRL1 ch0 after write level cal: 0x001F001F
MMDC_MPWLDECTRL0 ch1 after write level cal: 0x001F001F
MMDC_MPWLDECTRL1 ch1 after write level cal: 0x001F001F
Would you like to run the DQS gating, read/write delay calibration? (y/n)
Starting DQS gating calibration...
. . . . . . . . . . . . . . ERROR FOUND, we can't get suitable value !!!!
dram test fails for all values.
The DDR stress test can run with an incrementing frequency or at a static freq
To run at a static freq, simply set the start freq and end freq to the same valu
e
Would you like to run the DDR Stress Test (y/n)?
Enter desired START freq (135 to 672 MHz), then hit enter.
Note: DDR3 minimum is ~333MHz, do not recommend to go too much below this.
400
The freq you entered was: 400
Enter desired END freq (135 to 672 MHz), then hit enter.
Make sure this is equal to or greater than start freq
400
The freq you entered was: 400
Beginning stress test
loop: 1
DDR Freq: 396 MHz
t0.1: data is addr test
Address of failure: 0x10000000
Data was: 0x0047ff80
But pattern should match address
Solved! Go to Solution.
Thanks all。 It‘s because of the clk. There are two clk in imx6q. We used the both to control 4pcs DDR3, one for two DDR3.After use the same one clock to control the all 4 DDR3. It works normal.
Thanks all。 It‘s because of the clk. There are two clk in imx6q. We used the both to control 4pcs DDR3, one for two DDR3.After use the same one clock to control the all 4 DDR3. It works normal.