Regarding BFU690F NPN wideband silicon RF transistor , the transistor get damaged and the collector current only = 63mA . Collector voltage = 4.7v and Vce =4.3 v.
Moreover, if the Vc =6.5v , Vce = 2.498 v and Ic= 32mA the transistor fine .Is Is that the Vce cannot so high ?
The DC value is 9v , May i know the transient voltage for the BFU 690F can withstand. U mean the Vcc is transient voltage?
Moreover , for the the typical value for dc current gain for lc = 62mA ; Vce = 4.3 v ; T = 25 ?
Did you provide DC voltage values?
If using RF choke biasing, the peak voltage can be twice VCC and it may violate maximum rating.
If your design uses high impedance base bias, the maximum voltage is VCEO=5.5V and it can be easily exceeded.
No problems if collector load is resistive or if base bias is low impedance.
Have a great day,
Pavel
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