Hi Aaron,
Yes, the PNP can be used. Nominally 100 – 200 hFE, but as long as it is below 400 at high temperature, there should be no problem.
Controlling the Ballast transistor must be delicate. With transistors with higher hFE, the regulation can be unstable at rapid input voltage change due to parasitic capacitance at base of the transistor that can generate false current that is then multiplied by the gain.
Also, transistors have low hFE at low temperatures and to deliver required current (Ic_required), their hFE (at low temperature) must be higher than:
hFE_min = Ic_required / Ibctlmax = Ic_required / 2.3mA (datasheet).
Regards,
Daniel