thanks, peg
After reading your reply, I reviewed a textbook on digital circuit and searched on google. Due to the physical principle of Flash Memory, wrtting a memory cell is accomplished by first applying a required high voltage (programming voltage) to the cell, then write the data. GP32 contains a charge pump which is capable of produce the required high voltage from its normal voltage, the charge pump is controlled through programming. Under normal voltage, the memory cell is read-only.
As far as programming is concerned, Flash memory puts a contraint on program structure design. For example, you cannot store a constant in Flash use " sta <flash address>..", instead, you can use
ORG <flash address>
ConInFlash: DC.B <constant>
when programming the device, the <constant> is written to the flash address <flash address>.
Best Regards
zen