Hello,
I faced with the similar issue on our new board with imx6ULL and MT41K256M16TW-107.
One of our device with imx6ULL and MT41K256M16TW-107 works correctly.
But other one with the same imx6ULL and MT41K256M16TW-107 does not work.
Both devices DDR schematic are the same.
Here is voltage at power up:
+1V35_DRAM voltage is 1.35V
+VREF_DRAM voltage is 0.68V
R91 (SDCKE0) voltage is 0V
R92 (DRAM_RESET) voltage is 0V
In our design we have 32kHz and 24MHz crystals. I checked both signals.

DDR Stress Test can not calibrate DDR, see log:
============================================
DDR Stress Test (3.0.0)
Build: Dec 14 2018, 14:13:23
NXP Semiconductors.
============================================
============================================
Chip ID
CHIP ID = i.MX6 UltraLiteLite(0x65)
Internal Revision = TO1.0
============================================
============================================
Boot Configuration
SRC_SBMR1(0x020d8004) = 0x00000000
SRC_SBMR2(0x020d801c) = 0x00000001
============================================
ARM Clock set to 528MHz
============================================
DDR configuration
DDR type is DDR3
Data width: 16, bank num: 8
Row size: 15, col size: 10
Chip select CSD0 is used
Density per chip select: 512MB
============================================
Current Temperature: 45
============================================
DDR Freq: 396 MHz
ddr_mr1=0x00000000
Start write leveling calibration...
running Write level HW calibration
MPWLHWERR register read out for factory diagnostics:
MPWLHWERR PHY0 = 0x00000000
HW WL cal status: no suitable delay value found for byte 0
HW WL cal status: no suitable delay value found for byte 1
Write leveling calibration completed but failed, the following results were found:
MMDC_MPWLDECTRL0 ch0 (0x021b080c) = 0x001F001F
Write DQS delay result:
Write DQS0 delay: 31/256 CK
Write DQS1 delay: 31/256 CK
Error: failed during write leveling calibration
The log output is similar that I got early with imx6DL.
Can someone advise me what to check?