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Erase/Program Disturb Limits for MPC5777C Flash Memory

Question asked by charukamboj on Oct 25, 2018

I have a query related to MPC5777C Controller - FLASH Memory.

The datasheet does mention about the Number of program/erase cycles per block & data retention.

 

But I want to confirm if there are any erase/program disturb limits also? Will they vary as per temperature ranges?

 

Note: Disturb limits for Flash : This is the limit to study the robustness of the data storage of the flash cells when the state of a nearby cell is being changed, either through erasing, programming or reading. A disturb failure means that the initial state of the cell has been changed to the opposite state as result of erasing, programming or reading.

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