I have a query related to MPC5777C Controller - FLASH Memory.
The datasheet does mention about the Number of program/erase cycles per block & data retention.
But I want to confirm if there are any erase/program disturb limits also? Will they vary as per temperature ranges?
Note: Disturb limits for Flash : This is the limit to study the robustness of the data storage of the flash cells when the state of a nearby cell is being changed, either through erasing, programming or reading. A disturb failure means that the initial state of the cell has been changed to the opposite state as result of erasing, programming or reading.