Hi Balu
The parts with FlexNVM allow this area of Flash to "optionally" be used as emulated EEPROM, whereby the resulting EEPROM is smaller than the total Flash available (eg. 32k of Flash may be used to emulate 2k of EEPROM). The operation is controlled by the module so that the user can simply read/write FlexRAM as if it were EEPROM. The idea of using larger Flash area for a smaller EEPROM emulation is that the number write/erase cycles can be increased since the load is spread over more Flash cells and the result is a write/erase endurance limit similar to "real" EEPROMs.
It is possible to use any available Flash to do SW based EEPROM emulation of a similar nature but this requires the control to be in code rather than in a dedicated module.
The other question is whether your application requires high endurance EEPROM emulation (achieving, say, 1 million write/erases cycles) or whether you need EEPROM-like ablity to modify Flash based parameters but these won't be changed a lot - say up to 10'000 times maximum in its life time. In the second case simple EEPROM software emulation is also adequate.
See http://www.utasker.com/docs/uTasker/uTaskerFileSystem_3.PDF for more details of parameter storage (towards the end of the document) in Flash if high endurance is not the issue; this can be used with any KE, KL or K devices.
Regards
Mark
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