MRF13750H Pushes the Limits of Solid-State RF Energy

Document created by edk Employee on Jul 18, 2017
Version 1Show Document
  • View in full screen mode


NXP’s new MRF13750H transistor delivers 750 W CW for 915 MHz applications. Based on 50 V silicon LDMOS, the MRF13750H is an attractive alternative to vacuum tubes for very high power industrial systems. Applications range from industrial heating/drying, curing, and material welding, as well as particle accelerators




MRF13750H 750 W CW 915 MHz Applications

  • Industry’s highest power for 915 and 1300 MHz
  • 50 V LDMOS
  • 915 MHz reference circuit
    • 750 W CW
    • Gain 19.5 dB
    • Efficiency 63%