Wideband 100 W GaN

Document created by edk Employee on Jun 18, 2014Last modified by Diana Torres on Apr 18, 2017
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Features

  • Wide band amplifier
  • 100W GaN 200 MHz - 2500 MHz
  • Minimum 12 db Gain
  • 40% efficiency
  • Compact circuit
  • Highest ruggedness capability in the industry — > 65:1 VSWR
  • Highest gain figures in the industry — up to 26 dB
  • Highest efficiency in the industry — up to 80% at P1dB
  • Cost-effective, over-molded plastic packaging options
  • Low thermal resistance air cavity packaging options
  • Backed by NXP's secure volume manufacturing capability
  • Proven reliability, quality and consistency
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • World-class, global applications and design support
  • Available to participate in NXP's longevity program (10 year or 15 year lifetime guarantee — more information)
  • Field-proven high-voltage LDMOS process

 


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