Features
- Wide band amplifier
- 100W GaN 200 MHz - 2500 MHz
- Minimum 12 db Gain
- 40% efficiency
- Compact circuit
- Highest ruggedness capability in the industry — > 65:1 VSWR
- Highest gain figures in the industry — up to 26 dB
- Highest efficiency in the industry — up to 80% at P1dB
- Cost-effective, over-molded plastic packaging options
- Low thermal resistance air cavity packaging options
- Backed by NXP's secure volume manufacturing capability
- Proven reliability, quality and consistency
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- World-class, global applications and design support
- Available to participate in NXP's longevity program (10 year or 15 year lifetime guarantee — more information)
- Field-proven high-voltage LDMOS process
Featured NXP Products
Links
Last update:
06-18-2014
03:45 PM
