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Effect of Read disturb on MKV46F128VLL16 Flash memory

Question asked by Anup Kumar Gandra on Mar 3, 2020
Latest reply on Mar 5, 2020 by Kerry Zhou



I am using MKV46F128VLL16 MCU in one of our project's. I want to split flash memory and use one sector (last sector) of flash memory for storing some parameters basically lie EEPROM memory.


Can i use this flash / pflash for this?


Also what's the effect of read disturb (reading a flash memory repeatedly without an erase cycle) ? How many times i can read a location without any erase and write cycle before the data gets corrupted/weared out?