I am testing the eeprom write endurance using S32K118. I write 2KB datas to eeprom and read back the eeprom datas. And then compare the write datas with the read-back datas, if they are equal, number of success plus 1, if not , test over. Then write another 2KB datas witch totally different with the last 2KB datas to eeprom, and do the same test. I use CAN to send the success time to PC.
In the datasheet , the write endurance of eeprom is >100K (ratio = 16). I tested for several days, and the write time reached up to 2000K. I doubt whether i use the corrrect way to test write endurance? I want to know whether datas were written to D-flash when I write datas to eeprom(flexNVM) before MCU power down?