Hello Team NXP,
We are using A2T07D160W04SR3 RF Power LDMOS Transistor in our application.
We are biasing the PA as per the datasheet ie.VDD = 28 Vdc,IDQA = 450 mA, VGSB = 1.2 Vdc.
where Carrier amplifier is biased for fixed current of 450mA and peak amplifier to fixed voltage of 1.2V,
am i right in biasing the PA or we should be adjusting the carrier and peak amplifier bias to get optimum results?
Please help me out in this.
Note : it is not allowing to post this question in RF amplifier publish location that is the reason why I am posting It here.