I would like to implement small nonvolatile storage what utilize 2 sectors ( 2*4KB) of internal flash memory.
I can see SDK example pflash can be used for start.
But what is not so clear if MCU can execute code from one sector, when I erase/write to other one.
Does MCU stall during write/erase operation to flash memory ?
Or may be even better to execute critical code from RAM while erase is ongoing.
Ow what is drawback when internal flash memory erase/write during operation of MCU in RUN mode ?