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i.MX7D 2BG DDR calibration

Question asked by Ofer Austerlitz on Aug 26, 2018
Latest reply on Aug 28, 2018 by igorpadykov

Hi,

I am attempting to calibrate an i.MX7D with 2GB RAM consisting of 2x 8gb DDR RAM chips of Samsung

P/N: K4B8G1646D-MYK0. The chip internal configuration is a dual die configuration with CS0 and CS1.

 

1. I am using the "MX7D_DDR3_register_programming_aid_v1_2" spread sheet with following parameters:

Memory type:DDR3
Manufacturer:Samsung
Memory part number:K4B8G1646D-MYK0
Density of each DRAM device (Gb):8
Number of DRAM devices per chip select2
Density per chip select (Gb)1:8
Number of Chip Selects used22
Total DRAM density (Gb)16
Number of ROW Addresses215
Number of COLUMN Addresses210
Number of BANK addresses23
Number of BANKS28
Bus Width: 32 or 16 (bits)32
Clock Cycle Freq (MHz)3533
Clock Cycle Time (ns)1.876

 

Note: the number of ROW addresses in the chip pinout table is 15. I assume this is since it is a dual die chip in which each die is 4gb 

 

2. I am using v2.80 DDR Test Tool.

DDR Density is set to 1GB since setting to 2GB prints an error:

"Error, selected density is higher than what is supported!
Modify and Re-download again!!!"

 

Setting to 1GB i can see the following print:

===========================================

DDR configuration
DDR type is DDR3
Data width: 32, bank num: 8
Row size: 15, col size: 10
Two chip selects are used
Density per chip select: 1024MB
Total density is 2048MB
============================================

 

3. I then run calibration at 528Mhz.

Read calibration starts but then fails with the error: Error: failed during ddr calibration

 

Are DRAMs with 2 Chip selects configuration supported by the i.MX7D and the test tool?

Are there any errors in the above settings?

 

Thanks for your help.

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