Hi All, I have a question regarding flash programming on SPC5644A.
We have an existing bootloader implementation - this works fine to do any of the following:
- erase any block in either FLASHA or FLASHB
- Programming any block in FLASHA
- Programming Low and Mid Space blocks in FLASHB
What I cannot do is program High Space blocks in FLASHB *correctly*.
For example program 32 bytes at address 0x00100000, the first High Space block in FLASHB, 512kB in size.
Programming is performed by 32bit word, in sets of 8 (the page size is 256bits). After a set of 8 words written, the EHV programming sequence is applied.
We write this test sequence at 0x00100000:
0xAAAA5555,0x12345678,0xAAAA5555,0x12345678,
0x98765432,0xFAFAFAFA,0x98765432,0xFAFAFAFA,
After the EHV cycle is finished, we read the flash at 0x00100000 and see this:
0xFFFFFFFF,0xFFFFFFFF,0xFFFFFFFF,0xFFFFFFFF,
0xAAAA5555,0x12345678,0xAAAA5555,0x12345678,
0xFFFFFFFF,0xFFFFFFFF,0xFFFFFFFF,0xFFFFFFFF,
0x98765432,0xFAFAFAFA,0x98765432,0xFAFAFAFA,
The exact algorithm is:
erase FLASHB High Space block 0 at 0x00100000
set FLASHB mode to WRITE
Unlock FLASHB High Space block 0
Select FLASHB High Space block 0
Write Words:
int w;
uint32_t* FlashAddress = (uint32_t*)0x00100000;
const uint32_t* Data = mydata; // 32 bytes as above
for(w = 0; w < 8; w++) {
*FlashAddress = *Data;
FlashAddress++;
Data++;
}
FLASHB->MCR.B.EHV = 1;
volatile uint8_t tmp = FLASHB->MCR.B.DONE;
while(tmp == 0) {
tmp = FLASHB->MCR.B.DONE;
}
bool Result = FLASHB->MCR.B.PEG == 1;
FLASHB->MCR.B.EHV = 0;
set FLASHB mode to READ
There is something odd about addressing within these 256 bit pages in the High space blocks, any insights or advice would be amazing.
Thanks
