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Eeprom endurance and Writing and erase/programming process

Question asked by Javier Vallori on Apr 20, 2018
Latest reply on Apr 22, 2018 by Kerry Zhou

Hi, I have one question about the writing and erase/programming process for the LPC43xx MCUs. In the datasheet at 50.6.2.1 section, indicates the following:

 

- "Partial page writes are allowed, and the EEPROM will only take locations where a word has been written for the erase/program cycle."

 

Does this sentence means that the writing of a word, do not affect in the ENDURANCE of another word of the SAME page? In other words, the erase/programming process is done in the hole page, or just in the writing words? Thanks in advance.

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