Hi, I have one question about the writing and erase/programming process for the LPC43xx MCUs. In the datasheet at 50.6.2.1 section, indicates the following:
- "Partial page writes are allowed, and the EEPROM will only take locations where a word has been written for the erase/program cycle."
Does this sentence means that the writing of a word, do not affect in the ENDURANCE of another word of the SAME page? In other words, the erase/programming process is done in the hole page, or just in the writing words? Thanks in advance.
Hi Javier,
Your understanding is correct, write the word which has never write before in the same page, don't affect the endurance of another word of the same page.
Actually, the erase/programing process is done in the whole page.
Have a great day,
Kerry
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