Hi, I have one question about the writing and erase/programming process for the LPC43xx MCUs. In the datasheet at 22.214.171.124 section, indicates the following:
- "Partial page writes are allowed, and the EEPROM will only take locations where a word has been written for the erase/program cycle."
Does this sentence means that the writing of a word, do not affect in the ENDURANCE of another word of the SAME page? In other words, the erase/programming process is done in the hole page, or just in the writing words? Thanks in advance.