The datasheet specifies 100K nominal write/erase cycle endurance for the KE part (FTMRE) we're using. But what constitutes a write/erase cycle? The plain language is ambiguous.
In my application I write 4 bytes at a time to flash erasable in 512 byte sectors. Restating my question to resolve the ambiguity for my application, will I expend 129 endurance cycles by filling up and erasing the sector (128 word writes+1 erase), or just 1 cycle?
Thanks in advance