> for LDMOS temperature compensation ... at ambient temperature from -40 ~ 85 Degree range?
Please, you can use temperature compensated bias circuit as described in this application note:
https://www.nxp.com/docs/en/application-note/AN1643.pdf?fsrch=1&sr=2&pageNum=1
> maximum input power at 1150M
At 85C and the P3db compression point, 22.5 dB gain, the Pout is about 31W, roughly 45 dBm or a Pin of 22.4 dBm. Higher drive levels will not get you any more output power as the part has reached a hard saturation.
Have a great day,
Pavel
NXP TIC
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