I'm familiar with what a bias resistor tied to the output of an RF class A amplifier does -- not familiar with what the NXP MMIC Current Adj't resistor does
in 'AN11090 50 Ohm FM LNA', the Current Adj't resistor is referred to as 'Bias setting' and has a value of 15K
in 'AN11091 High Ohmic FM LNA', the Current Adj't resistor is again referred to as 'Bias setting' and has a value of 43K
in 'AN11735 Maximum RF Input Power BGU6102', the Current Adj't resistor is named 'Rbias' and is 5.9k, while L2 there [which connects between Vsupply & RF_out] is named 'bias' & is 27nH
in 'AN11865 BGU6104 Low Noise Amplifier for ISM / LTE bands', the 'LTE 700 – 930 MHz' BOM shows the Current Adj't resistor is 6.8K & L1 there [which again connects between Vsupply & RF_out] is 270nH
I'm trying to determine what 'Rbias' & 'bias' should be for BGU6102 & BGU6104 for an application down around 75MHz
-- in both ap notes AN11090 & AN11091, this component is a resistor, instead of an inductor
-- fig 2., on pg 12 of the BGU6102's data sheet, shows the graph of the 'Supply current as a function of bias resistor; typical values'
-- is the BGU6102's data sheet fig 2. referring to the 'Rbias' or the 'bias' component value ?
-- can someone there direct me to an ap note that'll help me determine what these values should be for an application down around 75MHz ?